| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Wavelength Dependence of Laser-Induced Bulk Damage Morphology in KDP Crystal: Determination of the Damage Formation Mechanism |
| HU Guo-Hang, ZHAO Yuan-An**, LI Da-Wei, XIAO Qi-Ling |
Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
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| Cite this article: |
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ZHAO Yuan-An, XIAO Qi-Ling, LI Da-Wei et al 2012 Chin. Phys. Lett. 29 037801 |
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Abstract Wet etch process is applied to expose the bulk damage sites in KDP crystals to the surface for the examination by scanning electron microscopy (SEM) and optical microscopy. The damage sites induced by 1064 nm laser consist of three distinct regions: a core, an outer region of modified material, and some oriented cracks. Laser irradiated with 355 nm results in an increase of damage density, a decrease of core diameter and, rarely, occurrence of the crack. Wavelength dependence of the damage feature suggests that a repulsive force exists among the adjacent plasmas, which prevents further expansion of plasma and decreases the size of plasma. The deposited energy absorbed by the smaller plasma may not be able to generate the crack.
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| Keywords:
78.20.-e
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Received: 13 August 2011
Published: 11 March 2012
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| PACS: |
78.20.-e
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(Optical properties of bulk materials and thin films)
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