| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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High-Temperature Permittivity and Data−Mining of Silicon Dioxide at GHz Band |
| YUAN Jie1, WEN Bo2, HOU Zhi-Ling3, LU Ming-Ming2, CAO Wen-Qiang1,4, BA Chuan1, FANG Xiao-Yong5, CAO Mao-Sheng2** |
1School of Information Engineering, Minzu University, Beijing 100081
2School of Material Science and Engineering, Beijing Institute of Technology, Beijing 100081
3School of Science, Beijing University of Chemical Technology, Beijing 100029
4School of EMPS, University College Dublin, Dublin 4, Ireland
5School of Science, Yanshan University, Qinhuangdao 066004
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| Cite this article: |
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YUAN Jie, WEN Bo, LU Ming-Ming et al 2012 Chin. Phys. Lett. 29 027701 |
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Abstract The high-temperature permittivity of quartz fibre-reinforced silicon dioxide (SiO2/SiO2) nano−composites is studied on the basis of the multi-scale theoretical model. We obtain the permittivity of the SiO2/SiO2 at high temperature, which is dependent on the temperature by data−mining. The result shows that the permittivity and loss tangent obtained by data-mining are well consistent with the measured ones. The high-temperature permittivity can be well predicted for SiO2/SiO2 by the as-proposed model and the data-mining method.
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| Keywords:
77.84.Lf
81.07.Wx
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Received: 30 December 2011
Published: 11 March 2012
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