| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of N-Doping on Absorption and Luminescence of Anatase TiO2 Films |
| XIANG Xia1**, SHI Xiao-Yan1, GAO Xiao-Lin1, JI Fang2, WANG Ya-Jun2, LIU Chun-Ming1, ZU Xiao-Tao1 |
1Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054
2Institute of Mechanical Manufacture Technology, China Academy of Engineering Physics, Mianyang 621900
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| Cite this article: |
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ZU Xiao-Tao, XIANG Xia, WANG Ya-Jun et al 2012 Chin. Phys. Lett. 29 027801 |
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Abstract Anatase TiO2 films are deposited on glass substrates at different oxygen partial pressures of 0.8–1.6 Pa. Room temperature N ion implantation is conducted in the films at ion fluences up to 5×1017 ions/cm2. UV−visible absorption and photoluminescence (PL) are investigated. With the increase of N ion fluences, the band gap of TiO2 decreases and the absorbance increases. X-ray photoelectron spectroscopy (XPS) confirms the formation of O-Ti-N nitride after implantation, resulting in the red shift of the band gap. The PL intensity of the deposited films increases with the increasing oxygen partial pressure and decreases remarkably due to the irradiation defects induced by ion implantation.
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| Keywords:
78.20.-e
42.70.-a
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Received: 16 June 2011
Published: 11 March 2012
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| PACS: |
78.20.-e
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(Optical properties of bulk materials and thin films)
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42.70.-a
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(Optical materials)
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