| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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GaSb p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Ni/Pt/Au Source/Drain Ohmic Contacts |
| WU Li-Shu1,2, SUN Bing2, CHANG Hu-Dong2, ZHAO Wei2, XUE Bai-Qing2, ZHANG Xiong1, LIU Hong-Gang2** |
1Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096
2Microwave Device and IC Department, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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| Cite this article: |
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WU Li-Shu, SUN Bing, CHANG Hu-Dong et al 2012 Chin. Phys. Lett. 29 127303 |
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Abstract GaSb is an attractive candidate for future high-performance III–V p-channel metal-oxide-semiconductor-field-effect-transistors (pMOSFETs) because of its high hole mobility. The effect of HCl based-chemical cleaning on removing the non-self limiting and instable native oxide layer of GaSb to obtain a clean and smooth surface has been studied. It is observed that the rms roughness of a GaSb surface is significantly reduced from 2.731 nm to 0.693 nm by using HCl:H2O (1:3) solution. The Ni/Pt/Au ohmic contact exhibits an optimal specific contact resistivity of about 6.89×10?7 Ω?cm2 with a 60 s rapid thermal anneal (RTA) at 250°C. Based on the chemical cleaning and ohmic contact experimental results, inversion-channel enhancement GaSb pMOSFETs are demonstrated. For a 6 μm gate length GaSb pMOSFET, a maximum drain current of about 4.0 mA/mm, a drain current on-off (ION/IOFF) ratio of >103, and a subthreshold swing of ～250 mV/decade are achieved. Combined with the split C–V method, a peak hole mobility of about 160 cm2/V?s is obtained for a 24 μm gate length GaSb pMOSFET.
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Received: 24 July 2012
Published: 04 March 2013
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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68.35.Ct
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(Interface structure and roughness)
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