| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition |
| CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong
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Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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CHEN Yao, JIANG Yang, XU Pei-Qiang et al 2011 Chin. Phys. Lett. 28 048101 |
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Abstract The strain in GaN epitaxial layers grown on 6H-SiC substrates with an AlN buffer by metalorganic chemical vapor deposition is investigated. It is found that the insertion of a graded AlGaN layer between the GaN layer and the AlN buffer can change the signs of strain. A compressive strain in an overgrown thick (2 µm) GaN layer is obtained. High-resolution x-ray diffraction, Raman spectroscopy and photoluminescence measurements are used to determine the strain state in the GaN layers. The mechanism of stress control by inserting graded AlGaN in subsequent GaN layers is discussed briefly.
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| Keywords:
81.15.Gh
81.05.Ea
62.20.-x
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Received: 26 September 2010
Published: 29 March 2011
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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62.20.-x
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(Mechanical properties of solids)
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