| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates |
| SUN Tao1, WANG Ming-Qing1, SUN Yong-Jian2, WANG Bo-Ping3, ZHANG Guo-Yi2, TONG Yu-Zhen2, DUAN Hui-Ling1**
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1 State Key Laboratory for Turbulence and Complex Systems, Center for Applied Physics and Technology (CAPT), and Department of Mechanics and Aerospace Engineering, College of Engineering, Peking University, Beijing 100871
2State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
3Department of Flight Theory, Aviation University of Air Force, Changchun 130022
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| Cite this article: |
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SUN Tao, WANG Ming-Qing, SUN Yong-Jian et al 2011 Chin. Phys. Lett. 28 047303 |
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Abstract GaN films on sapphire substrates are obtained using the metal-organic chemical vapor deposition growth technique. We present two methods to reduce the GaN wafer bowing caused by the mismatch of the thermal expansion coefficients (TECs) between the film and the substrate. The first method is to use coating materials on the back side of the substrate whose TECs are smaller than that of the GaN films. The second is to cut grooves on the back side of the sapphire substrate and filling the grooves with appropriate materials (e.g., tungsten, silicon nitride). For each method, we minimize wafer bowing and even reduce it to zero. Moreover, the two methods can reduce stress concentration and suppress the propagation of cracks in the GaN/sapphire structure.
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| Keywords:
73.61.Jc
68.55.ag
62.40.+i
62.20.mt
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Received: 18 October 2010
Published: 29 March 2011
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| PACS: |
73.61.Jc
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(Amorphous semiconductors; glasses)
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68.55.ag
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(Semiconductors)
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62.40.+i
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(Anelasticity, internal friction, stress relaxation, and mechanical resonances)
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62.20.mt
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(Cracks)
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