| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates |
| PAN Hong-Liang1, JIN Zhi1**, MA Peng1, GUO Jian-Nan1, LIU Xin-Yu1, YE Tian-Chun1, LI Jia2, DUN Shao-Bo2, FENG Zhi-Hong2
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1Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
2Science and Technology on ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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| Cite this article: |
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PAN Hong-Liang, JIN Zhi, MA Peng et al 2011 Chin. Phys. Lett. 28 127202 |
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Abstract Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top−gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of 1 µm , are larger than 800 MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors, which paves the way for high-performance graphene devices and circuits.
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| Keywords:
72.80.Vp
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Received: 14 July 2011
Published: 29 November 2011
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| PACS: |
72.80.Vp
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(Electronic transport in graphene)
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