| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Molecular Dynamical Simulations on a-C:H Film Growth from C and H Atomic Flux: Effect of Incident Energy |
QUAN Wei-Long1,2, LI Hong-Xuan1, ZHAO Fei1, JI Li1, DU Wen1, ZHOU Hui-Di1, CHEN Jian-Min1 |
| 1State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 2School of Mathematics, Physics and Software Engineering, Lanzhou Jiaotong University, Lanzhou 730070 |
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QUAN Wei-Long, LI Hong-Xuan, ZHAO Fei et al 2010 Chin. Phys. Lett. 27 088102 |
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Abstract Molecular dynamical simulation is carried out to investigate the effects of the incident energy on a-C:H film growth from C and H atomic flux. Our simulations show that the film growth at low incident energy (1 eV) is dominated by the adsorption of H and C atoms. At moderate incident energy (10 and 20 eV), the abstraction reaction of incident H atoms with H atoms adsorbed at the surface becomes important. At high incident energy (30 and 40 eV), the a-C:H film growth is a two-step process: one is the adsorption and the shallow implantation of C atoms, and the other is the deep implantation of H atoms.
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| Keywords:
81.15.Hi
83.10.Rs
61.43.Bn
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Received: 25 January 2010
Published: 28 July 2010
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| PACS: |
81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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83.10.Rs
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(Computer simulation of molecular and particle dynamics)
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61.43.Bn
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(Structural modeling: serial-addition models, computer simulation)
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