| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Observation of Room Ferromagnetism in Cu-Implanted Crystal ZnO |
LI Tian-Jing1, LI Gong-Ping1, GAO Xing-Xin1, CHEN Jing-Sheng2 |
| 1School of Nuclear Science and Technology, Lanzhou University, Lanzhou 730000 2Department of Material Science and Engineering, National University Singapore, Singapore 119260, Singapore |
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LI Tian-Jing, LI Gong-Ping, GAO Xing-Xin et al 2010 Chin. Phys. Lett. 27 087501 |
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Abstract Ion implantation technique is used to study the magnetic properties of Cu-doped ZnO. The room temperature ferromagnetism in the Cu-implanted ZnO samples is observed. From the photoluminescence spectrum of implanted samples we observe a broad green emission around 510 nm, which is related to defects in the samples. X-ray photoelectron spectroscopy measurement shows that Cu ions are in the mixed oxidation state of +1 or +2 and substitute for the Zn2+ ions of the ZnO matrix. We argue that the ferromagnetism is related to these defects, and the substitution of Cu2+ into Zn2+ sites in crystal ZnO could contribute to the observed ferromagnetism.
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| Keywords:
75.50.Pp
61.72.Uj
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Received: 25 January 2010
Published: 28 July 2010
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| PACS: |
75.50.Pp
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(Magnetic semiconductors)
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61.72.uj
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(III-V and II-VI semiconductors)
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