| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions |
CHEN Lei-Ming1,2, LI Guang-Cheng1, ZHANG Yan1, GUO Yan-Feng2 |
| 1Zhengzhou Institute of Aeronautical Industry Management. Zhengzhou, Henan 450015 2National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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CHEN Lei-Ming, LI Guang-Cheng, ZHANG Yan et al 2010 Chin. Phys. Lett. 27 077401 |
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Abstract In this work, p-n junctions are made from directly depositing optimal doped La1.85Sr0.15CuO4 (LSCO) films on n-type Nb-doped SrTiO3 substrates. Film thickness controlled rectifying behaviors are strikingly displayed. The starting points of the diffusion voltage reduction Vd-on change clearly with varying film thickness. Vd-on and TC coincide with each other when the film thickness is larger than 300 nm, indicating a close relation between the two parameters. However, when the film is very thin (<350 nm) a departure between the two parameters was also observed. A possible reason for this is discussed within the framework of an inhomogeneous Schottky contact. Enhanced interface inhomogeneity due to the tensile strain appears to be the origin.
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| Keywords:
74.78.Fk
74.72.-h
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Received: 09 November 2009
Published: 28 June 2010
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| PACS: |
74.78.Fk
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(Multilayers, superlattices, heterostructures)
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74.72.-h
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(Cuprate superconductors)
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