| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of AlN and AlGaN Interlayer on Properties of InAlN/GaN Heterostructures |
| DONG Xun, LI Zhong-Hui, LI Zhe-Yang, ZHOU Jian-Jun, LI Liang, LI Yun, ZHANG Lan, XU Xiao-Jun, XU Xuan, HAN Chun-Lin |
| National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| Cite this article: |
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DONG Xun, LI Zhong-Hui, LI Zhe-Yang et al 2010 Chin. Phys. Lett. 27 037102 |
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Abstract InAlN/GaN heterojunction structures are grown on two-inch c-face(0001) sapphire substrates by metalorganic chemical vapour deposition. AlN and AlGaN interlayers are intentionally inserted into the structure to improve the electrical properties. The lowest sheet resistance of 359 Ω/sq and the highest room-temperature two-dimensional electron gas (2DEG) mobility of 1051 cm2 V-1s-1 is obtained in the structure with AlN thickness of 1.3 nm. The structure with AlN thickness of 2 nm exhibits the highest 2DEG concentration of 1.84×1013 cm-2. The sample with an AlGaN interlayer gives a smoother surface morphology compared to the one using an AlN interlayer, indicating potential applications of this technique in device fabrication.
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| Keywords:
71.10.Ca
79.60.Jv
81.15.Gh
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Received: 06 November 2009
Published: 09 March 2010
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| PACS: |
71.10.Ca
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(Electron gas, Fermi gas)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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