| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Excellent Passivation of p-Type Si Surface by Sol-Gel Al2O3 Films |
| XIAO Hai-Qing1, ZHOU Chun-Lan2, CAO Xiao-Ning2, WANG Wen-Jing2, ZHAO Lei2, LI Hai-Ling2, DIAO Hong-Wei2 |
| 1Institute of Industrial Product Inspection, Chinese Academy of Inspection and Quarantine, Beijing 1001232Solar Cell Technology Laboratory, Institute of Electrical Engineering, Chinese Academy of Sciences, PO Box 2703, Beijing 100190 |
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| Cite this article: |
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XIAO Hai-Qing, ZHOU Chun-Lan, CAO Xiao-Ning et al 2009 Chin. Phys. Lett. 26 088102 |
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Abstract Al2O3 films with a thickness of about 100nm synthesized by spin coating and thermally treated are applied for field-induced surface passivation of p-type crystalline silicon. The level of surface passivation is determined by techniques based on photoconductance. An effective surface recombination velocity below 100cm/s is obtained on 10Ω·cm p-type c-Si wafers (Cz Si). A high density of negative fixed charges in the order of 1012cm-2 is detected in the Al2O3 films and its impact on the level of surface passivation is demonstrated experimentally. Furthermore, a comparison between the surface passivation achieved for thermal SiO2 and plasma enhanced chemical vapor deposition SiNx:H films on the same c-Si is presented. The high negative fixed charge density explains the excellent passivation of p-type c-Si by Al2O3.
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| Keywords:
81.65.Rv
77.84.-s
84.60.Jt
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Received: 13 February 2009
Published: 30 July 2009
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| PACS: |
81.65.Rv
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(Passivation)
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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84.60.Jt
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(Photoelectric conversion)
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