Chin. Phys. Lett.  2009, Vol. 26 Issue (8): 087302    DOI: 10.1088/0256-307X/26/8/087302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Hydrogenic Donor in a Spherical Quantum Dot with Different Confinements
A. John Peter1, K. Navaneethakrishnan2
1Govt. Arts College, Melur-625 106, Madurai, India2Madurai Kamaraj University, Madurai-625 021, India
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A. John Peter, K. Navaneethakrishnan 2009 Chin. Phys. Lett. 26 087302
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Abstract Binding energies of a hydrogenic donor in a spherical GaAs quantum dot surrounded by Ga1-xAlxAs matrix are calculated. The results are presented for realistic barrier heights corresponding to different values of x (x<0.4). The calculations are performed under two different conditions: (i) a spherical dot with square well confinement and (ii) a dot with parabolic potential well confinement. The results show that (i) the donor ionization energies are always higher under parabolic confinement as compared to a dot of the same radius under square well confinement and (ii) the oscillator strengths coupling ground state with excited states are two orders larger under parabolic confinement. Our results are in agreement with the results of other researchers.
Keywords: 73.20.Dx      73.61.Ey     
Received: 07 April 2009      Published: 30 July 2009
PACS:  73.20.Dx  
  73.61.Ey (III-V semiconductors)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/8/087302       OR      https://cpl.iphy.ac.cn/Y2009/V26/I8/087302
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A. John Peter
K. Navaneethakrishnan
[1] Bella R S and Navaneethakrishnan K 2004 Solid StateCommun. 130 773
[2] Fujita H 2004 Micromachines as Tools forNanotechnology (Berlin: Springer)
[3] Delerue C and Lannoo M 2004 Nanostructures Theory andModelling (Berlin: Springer)
[4] Goser K, Glosekotter P and Dienstuhl K 2004 Nanoelectronics and Nanosystems from Transistors to Molecular andQuantum Devices (Berlin: Springer)
[5] Bimberg D, Grundmann M and Ledentsov N 1999 QuantumDot Heterostructures (New York: Wiley)
[6] Jacal L, Hawrylak P and Wojs A 1997 Quantum Dots(Berlin: Springer)
[7] Sidor Y, Partoens B, Peeters F M, Schildermans N, Hayne,M, Moshchalkov V V, Rastelli A and Schmidt O G 2006 Phys. Rev.B 73 155334
[8] Wang X F 2007 Phys. Lett. A 364 66
[9] Vivas-Moreno J J and Porras-Motenero W 1998 Phys.Status Solidi B 210 723
[10] Zhu L, Xiang J J and Gu B L 1990 Phys. Rev. B 41 6001
[11] Oyoko H O, Duque C A and Porras-Montenegro N 2001 J.Appl. Phys. 90 819
[12] John Peter A 2006 Mod.Phys. Lett. B 20 1127
[13] Ribeiro F J and Latg\.e A 1994 Phys. Rev. B 50 4913
[14] Duque C A, Porras-Montenegro N, de Dios-Leyva M andOliveira L E 2007 J. Appl. Phys. 101 093716
[15] Jeyam G S and Navaneethakrishnan K 2003 Solid StateCommun. 126 681
[16] Bose C 1999 Physica E 4 180
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