| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure |
| ZHU Xiao-Li1,2, XIE Chang-Qing2, ZHANG Man-Hong2, LIU Ming2, CHEN Bao-Qin2, PAN Feng1 |
| 1Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 1000842Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 |
|
| Cite this article: |
|
ZHU Xiao-Li, XIE Chang-Qing, ZHANG Man-Hong et al 2009 Chin. Phys. Lett. 26 086803 |
|
|
|
|
Abstract Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.
|
| Keywords:
68.70.+w
61.10.-i
61.80.Cb
|
|
|
Received: 04 March 2009
Published: 30 July 2009
|
|
| PACS: |
68.70.+w
|
(Whiskers and dendrites (growth, structure, and nonelectronic properties))
|
| |
61.10.-i
|
|
| |
61.80.Cb
|
(X-ray effects)
|
|
|
|
|
|
[1] Gu J, Xiao X Y, Takulapalli B R, Morrison M E, Zhang P Mand Zenhausern F 2008 J. Vac. Sci. Technol. B 26 1860
[2] Zhu X L, Liu S B, Chen T, Jiang Y J and Zuo T C 2005 Chin. Phys. Lett. 22 1526
[3] Pan F, Song C, Liu X J, Yang Y C and Zeng F 2008 Mater. Sci. Engin. R 62 1
[4] Zhang Y, Shan X D, Liao Z M, Zhao Q, Xu J and Yu D P 2008 Chin. Phys. Lett. 25 644
[5] Ponawala A and Milanfar P 2007 Microelectron. Engin. 84 2837
[6] Benschop J, Banine V, Lok S and Loopstra E 2008 J.Vac. Sci. Technol. B 26 2204
[7] Girolamo J D, Chouiki M, Tortai J H, Sourd C, Derrough S,Zelsmann M and Boussey J 2008 J. Vac. Sci. Technol. B 262271
[8] Cheng H K, Shew B Y and Hsu S C 2007 Opt. Engin. 46 048001
[9] Altissimoa M, Romanato F, Vaccaria L, Businaroa L, CojocaD, Kaulicha B, Cabrinic S and Fabrizio E D 2002 Microelectron.Engin. 61--62 173
[10] Bourdillon A J, Boothroyd C B, Williams G P andVladimirsky Y L 2003 J. Phys. D: Appl. Phys. 36 2471
[11] Chen Y, Rousseaux F, Haghiri-Gosnet A M, Kupka R K, RavetM F, Simon G and Lounois 1996 Microelectron. Engin. 30191 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
