Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering

doi:10.1088/0256-307X/26/5/057101

Chin. Phys. Lett.

2009, Vol. 26

Issue (5): 057101 DOI: 10.1088/0256-307X/26/5/057101

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Oxygen Recovery in Hf Oxide Films Fabricated by Sputtering

JIANG Ran, LI Zi-Feng

School of Physics, Shandong University, Ji'nan, 250100

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JIANG Ran, LI Zi-Feng 2009 Chin. Phys. Lett. 26 057101

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Abstract The chemical structure of ultrathin Hf oxide films (< 10nm) fabricated by a standard sputtering method is investigated using x-ray spectroscopy and Rutherford backscattering spectroscopy. According to the experiments, oxygen species are impacted to the HfO₂/Si interface during the initial sputtering, and then released back to the upper HfO₂region driven by the oxygen concentration grads. A vacuum annealing can greatly enhance this recovery process. Additionally, significant SiO₂ reduction in the interface is observed after the vacuum annealing for the thick HfO₂ films in our experiment. It might be an effective method to confine the interfacial layer thickness by sputtering thick HfO₂ in no-oxygen ambient.

Keywords: 71.55.Ak 71.70.Gm 77.55.+f

Received: 06 October 2008 Published: 23 April 2009

PACS:	71.55.Ak	(Metals, semimetals, and alloys)
	71.70.Gm	(Exchange interactions)
	77.55.+f

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https://cpl.iphy.ac.cn/10.1088/0256-307X/26/5/057101 OR https://cpl.iphy.ac.cn/Y2009/V26/I5/057101

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