| ATOMIC AND MOLECULAR PHYSICS |
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Atomic Layer Deposition of Al2O3 on H-Passivated GeSi: Initial Surface Reaction Pathways with H/GeSi(100)-2×1 |
| SHI Yu, SUN Qing-Qing, DONG Lin, LIU Han, DING Shi-Jin, ZHANG Wei |
| State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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SHI Yu, SUN Qing-Qing, DONG Lin et al 2009 Chin. Phys. Lett. 26 053101 |
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Abstract The reaction mechanisms of Al(CH3)3 (TMA) adsorption on H-passivated GeSi(100)-2×1 surface are investigated with density functional theory. The Si-Ge and Ge-Ge one-dimer cluster models are employed to represent the GeSi(100)-2×1 surface with different Ge compositions. For a Si-Ge dimer of a H-passivated SiGe surface, TMA adsorption on both Si-H* and Ge-H* sites is considered. The activation barrier of TMA with the Si-H* site (1.2eV) is higher than that of TMA with the Ge-H* site (0.91eV), which indicates that the reaction proceeds more slowly on the Si-H* site than on the Ge-H* site. In addition, adsorption of TMA is more energetically favorable on the Ge-Ge dimer than on the Si-Ge dimer of H-passivated SiGe.
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| Keywords:
31.15.A-
31.15.E-
78.66.Db
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Received: 11 November 2008
Published: 23 April 2009
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