| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Influence of Oxygen Vacancy on Transport Property in Perovskite Oxide Heterostructures |
| HAN Peng1,2, JIN Kui-Juan1, LÜ Hui-Bin1, JIA Jin-Feng2 , QIU Jie1, HU Chun-Lian1, YANG Guo-Zhen1 |
| 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 1001902Department of Physics, Tsinghua University, Beijing 100084 |
|
| Cite this article: |
|
HAN Peng, JIN Kui-Juan, LÜ et al 2009 Chin. Phys. Lett. 26 027301 |
|
|
|
|
Abstract Effect of oxygen vacancy on transport property of perovskite microstructures is studied theoretically. Compared with calculated and measured I-V curves, it is revealed that electron conduction plays an important role in the oxygen nonstoichiometry perovskite heterostructures even with hole-doped or un-doped material due to the oxygen vacancies. In addition, a detailed understanding of the influence of oxygen vacancy concentration and temperature on the conduction characteristics of oxide heterojunction with both forward and reverse biases is obtained by calculation.
|
| Keywords:
73.40.Lq
73.20.Hb
73.50.Gr
|
|
|
Received: 22 October 2008
Published: 20 January 2009
|
|
| PACS: |
73.40.Lq
|
(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
| |
73.20.Hb
|
(Impurity and defect levels; energy states of adsorbed species)
|
| |
73.50.Gr
|
(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
|
|
|
|
|
|
[1] Tanaka H et al 2002 Phys. Rev. Lett. 88 027204 Mitra C et al 2003 Phys. Rev. Lett. 90 017202
[2] Lu H B et al 2005 Appl. Phys. Lett. 86 032502 Jin K J et al 2005 Phys. Rev. B 71 184428
[3] Hunter D et al 2006 Appl. Phys. Lett. 89092102
[4] De Teresa J M et al 1999 Phys. Rev. Lett. 824288 O'Donnell J et al 2000 Appl. Phys. Lett. 761914 Alldredge L M B et al 2006 Appl. Phys. Lett. 89 182504
[5] Newns D M et al 1998 Appl. Phys. Lett. 73780
[6] Zhou Q L et al 2005 Europhys. Lett. 71 283
[7] Han P et al 2007 Appl. Phys. Lett. 91 182102 Han P and Jia J F 2008 Phys. Lett. A 372 4943
[8] Qiu J et al 2007 Europhys. Lett. 79 57004
[9] Sun J R et al 2004 Appl. Phys. Lett. 84 4804 Li G et al 2007 Appl. Phys. Lett. 91 163114
[10] Xiong C M et al 2007 Appl. Phys. Lett. 91053510
[11] Picozzi S et al 2007 Phys. Rev. B 75 094418
[12] Sterne P A and Wang C S 1988 Phys. Rev. B 377422
[13] Hossain F M et al 2007 Solid State Ionics 178 319
[14] Selme M O and Pecheur P 1983 J. Phys. C 162559
[15] Moos R et al 1995 Appl. Phys. A 61 389
[16] Lankhorst M H R et al 1996 Phys. Rev. Lett. 77 2989
[17] Sogaard M et al 2006 Solid State Ionics 1773285
[18] Horio K et al 1990 IEEE Trans. Electron. Devices 37 1093 Han P et al 2006 J. Appl. Phys. 99 074504
[19] Neamen D A 2003 Semiconductor Physics and DevicesBasic Principles 3rd edn (New York: McGraw-Hill) |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
