| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with Current Slump |
| YANG Ling, HAO Yue, MA Xiao-Hua, QUAN Si, HU Gui-Zhou, JIANG Shou-Gao, YANG Li-Yuan |
| Key Laboratory of Wide Band Gap Semiconductor Material and Devices, Institute of Microelectronics, Xidian University, Xi'an 710071 |
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| Cite this article: |
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YANG Ling, HAO Yue, MA Xiao-Hua et al 2009 Chin. Phys. Lett. 26 117104 |
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Abstract The current slump of different recipes of SiNx passivated AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. The dc and pulsed current-voltage curves of AlGaN/GaN HEMTs using different recipes are analyzed. It is found that passivation leakage has a strong relationship with NH3 flow in the plasma-enhanced chemical vapor phase deposition process,
which has impacted on the current collapse of SiNx passivated devices. We analyze the pulsed IDS-VDS characteristics of different recipes of SiNx passivation devices for different combinations of gate and drain quiescent biases (VGS0, VDS0) of (0, 0), (-6, 0), (-6, 15) and (0, 15)V. The possible mechanisms are the traps in SiNx passivation capturing the electrons and the surface states at the SiNx/AlGaN interface, which can affect the channel of two-dimensional electron gas and cause the current collapse.
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| Keywords:
71.55.Eq
71.55.Ak
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Received: 24 April 2009
Published: 30 October 2009
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