| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin Relaxation of Electrons in Single InAs Quantum Dots |
| MA Shan-Shan, DOU Xiu-Ming, CHANG Xiu-Ying, SUN Bao-Quan, XIONG Yong-Hua, NIU Zhi-Chuan, NI Hai-Qiao |
| SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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MA Shan-Shan, DOU Xiu-Ming, CHANG Xiu-Ying et al 2009 Chin. Phys. Lett. 26 117201 |
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Abstract By using polarization-resolved photoluminescence spectra, we study the electron spin relaxation in single InAs quantum dots (QDs) with the configuration of positively charged excitons X+ (one electron, two holes). The spin relaxation rate of the hot electrons increases with the increasing energy of exciting photons. For electrons localized in QDs the spin relaxation is induced by hyperfine interaction with the nuclei. A rapid decrease of polarization degree with increasing temperature suggests that the spin relaxation mechanisms are mainly changed from the hyperfine interaction with nuclei into an electron-hole exchange interaction.
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| Keywords:
72.25.Fe
72.25.Rb
73.21.La
78.47.+p
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Received: 01 July 2009
Published: 30 October 2009
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