| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Large Signal Modulation Characteristics in the Transition Regime for Two-State Lasing Quantum Dot Lasers |
| Zun-Ren Lv1,2, Hai-Ming Ji1,2**, Xiao-Guang Yang1,2, Shuai Luo1,2, Feng Gao1,2, Feng Xu1,2, Tao Yang1,2** |
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Zun-Ren Lv, Hai-Ming Ji, Xiao-Guang Yang et al 2016 Chin. Phys. Lett. 33 124204 |
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Abstract Large-signal modulation capability, as an important performance indicator, is directly related to the high-speed optical communication technology involved. We experimentally and theoretically investigate the large-signal modulation characteristics of the simultaneous ground-state (GS) and the excited-state (ES) lasing in InAs/GaAs quantum dot laser diodes. The large-signal modulation capability of total light intensity in the transition regime from GS lasing to two-state lasing is unchanged as the bias-current increases. However, GS and ES large-signal eye diagrams show obvious variations during the transition. Relaxation oscillations and large-signal eye diagrams for GS, ES, and total light intensities are numerically simulated and analyzed in detail by using a rate-equation model. The findings show that a complementary relationship between the light intensities for GS and ES lasing exists in both the transition regime and the two-state lasing regime, leading to a much smaller overshooting power and a shorter settling time for the total light intensity. Therefore, the eye diagrams of GS or ES lasing are diffuse whereas those of total light intensity are constant as the bias-current increases in the transition regime.
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Received: 25 August 2016
Published: 29 December 2016
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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78.67.Hc
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(Quantum dots)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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| Fund: Supported by the National Key Research and Development Program of China under Grant No 2016YFB0402302, and the National Natural Science Foundation of China under Grant No 91433206. |
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