| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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New Method of Total Ionizing Dose Compact Modeling in Partially Depleted Silicon-on-Insulator MOSFETs |
| Jian-Qiang Huang1,2, Wei-Wei He1,2, Jing Chen1**, Jie-Xin Luo1, Kai Lu1,2, Zhan Chai1 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Jian-Qiang Huang, Wei-Wei He, Jing Chen et al 2016 Chin. Phys. Lett. 33 096101 |
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Abstract On the basis of a detailed discussion of the development of total ionizing dose (TID) effect model, a new commercial-model-independent TID modeling approach for partially depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors is developed. An exponential approximation is proposed to simplify the trap charge calculation. Irradiation experiments with $^{60}$Co gamma rays for IO and core devices are performed to validate the simulation results. An excellent agreement of measurement with the simulation results is observed.
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Received: 11 April 2016
Published: 30 September 2016
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| PACS: |
61.80.Ed
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(γ-ray effects)
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61.82.-d
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(Radiation effects on specific materials)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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Abstract
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