| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Comparative Study of Monolayer and Bilayer Epitaxial Graphene Field-Effect Transistors on SiC Substrates |
| Ze-Zhao He1,2, Ke-Wu Yang1,2, Cui Yu2, Qing-Bin Liu2, Jing-Jing Wang2, Xu-Bo Song2, Ting-Ting Han2, Zhi-Hong Feng2**, Shu-Jun Cai2 |
1School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130
2National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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Ze-Zhao He, Ke-Wu Yang, Cui Yu et al 2016 Chin. Phys. Lett. 33 086801 |
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Abstract Monolayer and bilayer graphenes have generated tremendous excitement as the potentially useful electronic materials due to their unique features. We report on monolayer and bilayer epitaxial graphene field-effect transistors (GFETs) fabricated on SiC substrates. Compared with monolayer GFETs, the bilayer GFETs exhibit a significant improvement in dc characteristics, including increasing current density $I_{\rm DS}$, improved transconductance $g_{\rm m}$, reduced sheet resistance $R_{\rm on}$, and current saturation. The improved electrical properties and tunable bandgap in the bilayer graphene lead to the excellent dc performance of the bilayer GFETs. Furthermore, the improved dc characteristics enhance a better rf performance for bilayer graphene devices, demonstrating that the quasi-free-standing bilayer graphene on SiC substrates has a great application potential for the future graphene-based electronics.
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Received: 16 May 2016
Published: 31 August 2016
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