| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Polarization Stable Vertical Cavity Surface Emitting Laser Array Based on Proton Implantation |
| XUN Meng1, XU Chen1**, XIE Yi-Yang1,2, DENG Jun1, XU Kun1, JIANG Guo-Qing1, PAN Guan-Zhong1, CHEN Hong-Da2 |
1Key Laboratory of Optoelectronics Technology (Ministry of Education), Beijing University of Technology, Beijing 100124
2State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
|
|
| Cite this article: |
|
XUN Meng, XU Chen, XIE Yi-Yang et al 2015 Chin. Phys. Lett. 32 104204 |
|
|
|
|
Abstract Polarization stable characteristic of vertical cavity surface emitting laser array with rectangular element structure based on proton implantation is achieved. Arrays with different aperture sizes and different array scales are investigated. The maximum orthogonal polarization suppression ratio of a 6×6 array with 6 μm × 4 μm elements is as high as 16.1 dB at 51 mA. The x-polarization dominates y-polarization in the operation current range from the threshold to the saturated current. The full widths at half maximum in far-field profiles for x-polarization and y-polarization are 8.8° and 10.7°, respectively. These results suggest that stable polarization is available in the implant-defined VCSEL array.
|
|
|
Received: 25 July 2015
Published: 30 October 2015
|
|
|
|
|
|
|
|
[1] Du W M, Cao W Y and He Y F 2013 Chin. Phys. B 22 076803
[2] Cui H Y, Huang M and Ma M L 2013 Chin. Phys. B 22 124203
[3] Yoshikawa T, Kosaka H, Kurihara K, Kajita M, Sugimoto Y and Kasahara K 1995 Appl. Phys. Lett. 66 908
[4] Nobuaki U, Hideo N, Jun S, Akemi M, Hiromi O and Yasuaki M 2001 Jpn. J. Appl. Phys. 40 L33
[5] Yu Y T, Tuan P H, Wen C P, Huang K F and Chen Y F 2014 Laser Phys. Lett. 11 115001
[6] Botez D, Mawst L, Hayashida P, Peterson G and Roth T J 1988 Appl. Phys. Lett. 53 464
[7] Ostermann J M, Debernardi P, Jalics C and Michalzik R 2005 IEEE J. Sel. Top. Quantum Electron. 11 982
[8] Cao T, Xu Ch, Xie Y Y, Kan Q, Wei S M, Mao M M and Chen H D 2013 Chin. Phys. B 22 024205
[9] Ostermann J M, Debernardi P, Jalics C and Michalzik R 2005 IEEE Photon. Technol. Lett. 17 1593
[10] Xun M, Xu C, Xie Y Y, Zhu Y X, Mao M M, Xu K, Wang J, Liu J and Chen H D 2014 Electron. Lett. 50 1085
[11] Mao M M, Xu C, Wei S M, Xie Y Y, Liu J C and Xu K 2012 Acta Phys. Sin. 61 214207 (in Chinese)
[12] Samaneh A A, Sanayeh M B, Miah M J, Schwarz W, Wahl D, Kern A and Michalzik R 2012 Appl. Phys. Lett. 101 171104
[13] Xun M, Xu Ch, Xie Y Y, Deng J, Xu K and Chen H D 2015 Chin. Phys. Lett. 32 014209
[14] Moench H, Kolb J S, Engelhardt A P, Gerlach P, Jaeger R, Retsch J P, Weichmann U and Witzigmann B 2014 Proc. SPIE 9001 90010F-1
[15] Xun M, Xu Ch, Xie Y Y, Deng J, Xu K and Chen H D 2015 IEEE J. Quantum Electron. 51 2600106 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
