| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Extraction of Channel Length Independent Series Resistance for Deeply Scaled Metal-Oxide-Semiconductor Field-Effect Transistors |
| MA Li-Juan1, JI Xiao-Li1**, CHEN Yuan-Cong1, XIA Hao-Guang1, ZHU Chen-Xin1, GUO Qiang2, YAN Feng1** |
1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Wuhan Xinxin Semiconductor Manufacturing Corporation, Wuhan 430205
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| Cite this article: |
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MA Li-Juan, JI Xiao-Li, CHEN Yuan-Cong et al 2014 Chin. Phys. Lett. 31 097302 |
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Abstract The recently developed four Rsd extraction methods from a single device, involving the constant-mobility method, the direct Id–Vgs method, the conductance method and the Y-function method, are evaluated on 32 nm n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs). It is found that Rsd achieved from the constant-mobility method exhibits the channel length independent characteristics. The L-dependent Rsd extracted from the other three methods is proven to be associated with the gate-voltage-induced mobility degradation in the extraction procedures. Based on L-dependent behaviors of Rsd, a new method is proposed for accurate series resistance extraction on deeply scaled MOSFETs.
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Published: 22 August 2014
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| PACS: |
73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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85.30.Tv
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(Field effect devices)
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