| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Low Bias Negative Differential Resistance Behavior in Carbon/Boron Nitride Nanotube Heterostructures |
| WU Qiu-Hua1, ZHAO Peng1**, LIU De-Sheng2,3 |
1School of Physics and Technology, University of Jinan, Jinan 250022
2School of Physics, Shandong University, Jinan 250100
3Department of Physics, Jining University, Qufu 273155
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| Cite this article: |
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WU Qiu-Hua, ZHAO Peng, LIU De-Sheng 2013 Chin. Phys. Lett. 30 107304 |
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Abstract Based on the non-equilibrium Green's method and density functional theory, we investigate the electronic transport properties of ternary heterostructures based on carbon nanotubes and boron nitride nanotubes, with different atomic compositions, coupled to gold electrodes. Negative differential resistance (NDR) behavior can be observed due to suppression of the conduction channel at a certain bias. More importantly, the position of NDR can be tuned into the bias range as low as tens of meV by increasing the length of boron nitride nanotube. The peak-to-valley ratio, which is a typical character of NDR behavior, is also sensitive to the atomic compositions.
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Received: 02 July 2013
Published: 21 November 2013
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| PACS: |
73.23.-b
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(Electronic transport in mesoscopic systems)
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85.65.+h
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(Molecular electronic devices)
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