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The Microstructure and Thermal Conductivity of Aluminum Nitride Ceramics Sintered at High Pressure with CaC2 |
| LI Xiao-Lei**,WANG Li-Ying |
| School of Material Science and Engineering, Henan Polytechnic University, Jiaozuo 454010 |
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| Cite this article: |
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LI Xiao-Lei, WANG Li-Ying 2012 Chin. Phys. Lett. 29 050703 |
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Abstract Aluminum nitride (AlN) ceramics are sintered by high-pressure technology at 5 GPa/30 min/1500–1800°C, using aluminum nitride powder produced by direct nitriding methods and CaC2(3wt%) powder as the starting material and sintering additive, respectively. The sample sintered at 1800°C shows relatively high density (99.09%) and thermal conductivity (113.7 W/(m⋅K). XRD patterns indicate that there are no obvious impurity phases in the sintered AlN sample. Observation of the microstructure by SEM shows that the AlN powder grows into full crystal grains with uniform size, the crystal particles are in a regular hexagonal structure, and the grain boundary phases are clean without gas phase. The results suggest that AlN ceramics sintered with CaC2 can achieve the desired microstructure and high thermal conductivity.
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Received: 16 November 2011
Published: 30 April 2012
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| PACS: |
07.35.+k
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(High-pressure apparatus; shock tubes; diamond anvil cells)
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07.20.Hy
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(Furnaces; heaters)
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[1] Lee R R 1991 J. Am. Ceram. Soc. 74 2242
[2] Jackson T B, Virkar A V, More K L and Dinwiddie R B 1997 J. Am. Ceram. Soc. 80 1421
[3] Zheng R, Xi S Q and Zhou J E 2001 Rare Met. Mater. Eng. 30 396
[4] Li S S, Li X L, Ma H A, Su T C, Xiao H Y, Huang G F, Li Y, Zhang Y S and Jia X P 2011 Chin. Phys. Lett. 28 068101
[5] LI S S, Jia X P, Zang C Y, Tian Y, Zhang Y F, Xiao H Y, Huang G F, Ma L Q, Li Y, Li X L and Ma H A 2008 Chin. Phys. Lett. 25 3801
[6] Xiao H Y, Jia X P, Zang C Y, Li S S, Tian Y and Zhang Y F 2008 Chin. Phys. Lett. 25 1469
[7] Li X L, Ma H A, Zuo G H, Zheng Y J, Li J G and Jia X P 2008 J. Inorg. Mater. 23 104
[8] Watari K, Tsuzuki A and Torii Y 1992 J. Mater. Sci. Lett. 11 1508
[9] Slack G A, Tanzilli R A, Pohl R O and Vandersande J W 1987 J. Phys. Chem. Solids 48 641
[10] Virkar A V, Jackson T B and Cutler R A 1989 J. Am. Ceram. Soc. 72 2031
[11] Watari K, Valecillos M C, Brito M E, Toriyama M and Kanzaki S 1996 J. Am. Ceram. Soc. 79 3103
[12] Zhou Y P, Wang D F, Xi Y M, Zhuang H R, Wen S L, Guo J K and Yan D S 1999 J. Inorg. Mater. 4 674
[13] Li X L, Li D Y, Wang L Y, Li S S, Su T C, Ma H A and Jia X P 2010 J. Inorg. Mater. 25 537
[14] Ueno M, Onodera A, Shimomura O and Takemura K 1992 Phys. Rev. B 45 10123 |
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