| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Helium-Related Defect Evolution in Titanium Films by Slow Positron Beam Analysis |
| LI Yue1,DENG Ai-Hong1,2**,ZHOU Yu-Lu2,ZHOU Bing1,WANG Kang1,HOU Qing2,SHI Li-Qun3,QIN Xiu-Bo4,WANG Bao-Yi4 |
1Department of Physics, Sichuan University, Chengdu 610064
2Key Laboratory of Radiation Physics and Technology of Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
3Institute of Modern Physics, Fudan University, Shanghai 200433
4Laboratory of Nuclear Analysis Technique, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 |
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| Cite this article: |
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LI Yue, DENG Ai-Hong, ZHOU Yu-Lu et al 2012 Chin. Phys. Lett. 29 047801 |
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Abstract Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances. Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA). X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films. Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA). It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios. The variation of S indicates the formation and evolution of various He-related defects, with uniform distribution into the depth around 400 nm.
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Received: 15 October 2011
Published: 04 April 2012
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| PACS: |
78.70.Bj
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(Positron annihilation)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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07.85.Jy
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(Diffractometers)
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