| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods |
| FENG Qiu-Ju**, JIANG Jun-Yan, TAO Peng-Cheng, LIU Shuang, XU Rui-Zhuo, LI Meng-Ke, SUN Jing-Chang
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School of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029
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| Cite this article: |
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FENG Qiu-Ju, JIANG Jun-Yan, TAO Peng-Cheng et al 2011 Chin. Phys. Lett. 28 108103 |
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Abstract Arsenic-doped petal-like zinc oxide microrods are grown on silicon (100) substrates by the chemical vapor deposition method without the use of catalysts. Scanning electron microscopy shows that As-doped petal-like ZnO microrods with a preferred c−axial orientation are obtained, which is well in accordance with x-ray diffraction analysis. The obtained ZnO microrods have uniform lengths of about 2 µm and side lengths of about 100 nm. As-related acceptor emissions are observed from photoluminescence spectra of the ZnO microrods at a temperature of 11 K. The acceptor binding energy is estimated to be 128 meV.
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| Keywords:
81.07.Gf
81.05.Dz
81.15.Gh
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Received: 21 April 2011
Published: 28 September 2011
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| PACS: |
81.07.Gf
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(Nanowires)
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81.05.Dz
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(II-VI semiconductors)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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