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Improvement of High Temperature Characteristics for SiGeC p-i-n Diodes with Carbon Incorporation |
GAO Yong;LIU Jing;YANG Yuan |
Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048 |
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Cite this article: |
GAO Yong, LIU Jing, YANG Yuan 2008 Chin. Phys. Lett. 25 2285-2288 |
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Abstract Temperature-dependent characteristics of SiGeC p-i-n diodes are analysed and discussed. Based on the ISE data, the temperature-dependent physical models applicable for SiGeC/Si diodes are presented. Due to the addition of carbon into the SiGe system, the thermal stability of SiGeC diodes are improved remarkably. Compared to SiGe diodes, the reverse leakage current of SiGeC diodes is decreased by 97.1% at 400K and its threshold voltage shift is reduced over 65.3% with an increasing temperature from 300K to 400K. Furthermore, the fast and soft reverse recovery characteristics are also obtained at 400K for SiGeC diodes. As a result, the most remarkable feature of SiGeC diodes is the better high-temperature characteristics and this can be applied to high temperature up to 400K.
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Keywords:
85.30.De
71.20.Nr
85.30.Kk
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Received: 27 February 2008
Published: 31 May 2008
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PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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71.20.Nr
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(Semiconductor compounds)
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85.30.Kk
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(Junction diodes)
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[1] Hallstedt J, Haartman M, Hellstrom P E, Ostling M andRadamsson H H 2006 IEEE Electron. Device Lett. 27 466 [2] PingPing S, Parag U, Dong-Ho J, Deukhyoun H and George SL R 2007 IEEE Microwave Wireless Components Lett. 17 352 [3] Darwin E and Gerald O 2006 IEEE Trans. Electron.Devices 53 1834 [4] Gao Y, Liu J, Ma L and Yu M B 2006 Chin. J.Semiconduct. 27 1068 (in Chinese) [5] Ahoujja M, Yeo Y K, Hengehold R L and Pomrenke G S 2000 Appl. Phys. Lett. 77 1327 [6] Synopsys corporation 2004 ISE TCAD Release 9.5 UserManual. 15 143 [7] Osten H J 1998 J. Appl. Phys. 84 2716 [8] Sylvie G, Philippe D, Valerie A F, Patrice H and Osten H J2000 Semiconduct. Sci. Technol. 15 565 [9] Gao Y and Ma L 2004 Chin. Phys. Lett. 21 414 |
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