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I - V Characteristics of Metal/Polynitrobenzene Junctions |
| ZHENG Hai-peng;ZHANG Rui-feng;HUANG Jing-song1;LIU Shi-yong1;SHEN Jia-cong |
| State Key Laboratory of Supramolecular Structure and Spectroscopy, Department of Chemistry,
1National Integrated Optoelectronics Laboratory, Jilin University, Changchun 130023
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| Cite this article: |
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ZHENG Hai-peng, ZHANG Rui-feng, HUANG Jing-song et al 1997 Chin. Phys. Lett. 14 375-378 |
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Abstract We used a new polyphenylene derivative-polynitrobenzene (PNB) to construct metal/polymer Schottky devices, and studied the influence of polymer film thickness, thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions. The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good I - V behavior. But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole.
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| Keywords:
73.30.+y
73.61.Ph
73.40.Ns
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Published: 01 May 1997
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| PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.61.Ph
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(Polymers; organic compounds)
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73.40.Ns
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(Metal-nonmetal contacts)
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