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Geometrical Deviation and Residual Strain in Novel Silicon-on-Aluminum-Nitride Bonded Wafers |
| MEN Chuan-Ling1,2;XU Zheng1;WU Yan-Jun2;AN Zheng-Hu2;XIE Xin-Yun2;LIN Cheng-Lu2 |
| 1Institute of Microelectronic Materials, School of Material Science and Engineering, Tongji University, Shanghai 200092
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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MEN Chuan-Ling, XU Zheng, WU Yan-Jun et al 2002 Chin. Phys. Lett. 19 1718-1720 |
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Abstract Aluminum nitride (AlN), with much higher thermal conductivity, is considered to be an excellent alternative to the SiO2 layer in traditional silicon-on-insulator (SOI) materials. The silicon-on-aluminum-nitride (SOAN) structure was fabricated by the smart-cut process to alleviate the self-heating effects for traditional SOI. The convergent beam Kikuchi line diffraction pattern results show that some rotational misalignment exists when two wafers are bonded, which is about 3°. The high-resolution x-ray diffraction result indicates that, before annealed at high temperature, the residual lattice strain in the top silicon layer is tensile. After annealed at 1100°C for an hour, the strain in the top Si decreases greatly and reverses from tensile to the slightly compressive as a result of viscous flow of AlN.
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| Keywords:
81.15.Jj
77.55.+f
61.10.-i
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Published: 01 November 2002
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