| Original Articles |
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Structural Characterization and Photoluminescent Properties of
Zn1-xMgxO Films on Silicon |
| ZOU Lu;YE Zhi-Zhen;HUANG Jing-Yun;ZHAO Bing-Hui |
| State Key Laboratory of Silicon Material, Zhejiang University, Hangzhou 310027 |
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| Cite this article: |
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ZOU Lu, YE Zhi-Zhen, HUANG Jing-Yun et al 2002 Chin. Phys. Lett. 19 1350-1352 |
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Abstract Zn1-xMgxO films have been grown on silicon at various substrate temperatures by pulsed laser deposition. The structural and photoluminescent properties of films as a function of substrate temperature were studied. The optimized substrate temperature is 650°C. The x-ray diffraction spectra indicate that the films are highly C-axis oriented, and no phase separation is observed. The crystal grain size of film is about 100 nm as examined by atomic force microscopy. The cross-sectional transmission electron microscopy verified C-axis orientation of the Zn1-xMgxO. These films showed ultraviolet photoluminescence at room temperature. The near-band-edge emission peak of the Zn1-xMgxO film deposited at 600°C has a blue shift (0.40 eV) larger than that of the film deposited at 500°C (0.33 eV). The ratio of the near-band-edge to defect level peak intensity is as large as 159.
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| Keywords:
78.30.Fs
78.55.-m
78.66.Hf
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Published: 01 September 2002
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| PACS: |
78.30.Fs
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(III-V and II-VI semiconductors)
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78.55.-m
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(Photoluminescence, properties and materials)
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78.66.Hf
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(II-VI semiconductors)
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