Chin. Phys. Lett.  2002, Vol. 19 Issue (11): 1649-1652    DOI:
Original Articles |
ormation of Nanosized Inclusions in Cubic Boron Nitride Single Crystals
LIU Yu-Xian;XIAO Li-Mei;YIN Long-Wei
School of Materials Science and Engineering, Shandong University, Ji’nan 250061
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LIU Yu-Xian, XIAO Li-Mei, YIN Long-Wei 2002 Chin. Phys. Lett. 19 1649-1652
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Abstract Cubic boron nitride (c-BN) crystals with dimensions of 0.3-0.4 mm, which have been synthesized using lithium nitride (Li3N) as a catalyst with a high-pressure high-temperature method, were examined by transmission electron microscopy (TEM). The TEM result shows that there exits some nanostructrued areas containing several types of nanosized foreign particles within the as-grown c-BN crystals. We find that the nanometer inclusions are hexagonal BN with the lattice constants of a = 2.054Å and c = 6.66Å, tetragonal B25N with a = 8.79Å and c = 5.08Å, tetragonal B53N with a = 8.79Å and c = 5.08Å, and hexagonal Li3N with a = 3.648Å and c = 3.875Å.
Keywords: 61.16.Bg      61.72.Qq      81.10.-h     
Published: 01 November 2002
PACS:  61.16.Bg  
  61.72.Qq (Microscopic defects (voids, inclusions, etc.))  
  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2002/V19/I11/01649
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