| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding |
| CHEN Ting1, HONG Tao1, PAN Jiao-Qing2, CHEN Wei-Xi1, CHENG Yuan-Bing2, WANG Yang2, MA Xiao-Bo3, LIU Wei-Li3, ZHAO Ling-Juan2, RAN Guang-Zhao1, WANG Wei2, QIN Guo-Gang1 |
| 1State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 1008712Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 1000833State Key Laboratory of Functional Materials for Informatics, Laboratory of Nano Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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CHEN Ting, HONG Tao, PAN Jiao-Qing et al 2009 Chin. Phys. Lett. 26 064211 |
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Abstract A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the optical coupling and metal bonding areas are transversely separated is employed to integrate the silicon waveguide with an InGaAsP multi-quantum well distributed feedback structure. When electrically pumped at room temperature, the laser operates with a threshold current density of 2.9kA/cm2 and a slope efficiency of 0.02W/A. The 1542nm laser output exits mainly from the Si waveguide.
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| Keywords:
42.55.Px
42.60.By
42.82.Fv
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Received: 13 April 2009
Published: 01 June 2009
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.By
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(Design of specific laser systems)
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42.82.Fv
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(Hybrid systems)
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