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Heteroepitaxial Growth of Diamond Film on Cubic Boron Nitride
Substrate by Hot-Filament Chemical Vapour Deposition
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JIN Zengsun;LU Xianyi;ZOU Guangtian |
State Key Laboratory of Superhard Material, Jilin University, Changchun 130023 |
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Cite this article: |
JIN Zengsun, LU Xianyi, ZOU Guangtian 1995 Chin. Phys. Lett. 12 120-122 |
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Abstract Diamond films have been grown on high pressure synthesized cubic boron nitride (c-BN) particles by hot-filament chemical vapor deposition method, and heteroepitaxial diamond films on the c-BN (100) facets with no-evident defects were obtained, but polycrystalline diamond films were formed only on the c-BN (111) facets.
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Keywords:
81.15.Gh
68.55.Ce
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Published: 01 February 1995
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PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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68.55.Ce
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