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Fabrication of c-Si:H(p)/c-Si(n) Heterojunction Solar Cells with Microcrystalline Emitters |
| ZHOU Bing-Qing1,2;LIU Feng-Zhen2;ZHANG Qun-Fang2;XU Ying3;ZHOU Yu-Qin2;LIU Jin-Long2;ZHU Mei-Fang2 |
| 1Department of Physics, Inner Mongolia Normal University, Huhhot 010022
2Department of Physics, Graduate School, Chinese Academy of Sciences, Beijing 100049
4Beijing Solar Energy Research Institute, Beijing 100083 |
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| Cite this article: |
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ZHOU Bing-Qing, LIU Feng-Zhen, ZHANG Qun-Fang et al 2006 Chin. Phys. Lett. 23 1638-1640 |
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Abstract The p-type microcrystalline silicon (μc-Si:H) on n-type crystalline silicon (c-Si) heterojunction solar cells is fabricated by radio-frequency plasma enhanced chemical vapour deposition (rf-PECVD). The effect of the μc-Si:H p-layers on the performance of the heterojunction solar cells is investigated. Optimum μc-Si:H p-layer is obtained with hydrogen dilution ratio of 99.65%, rf-power of 0.08W/cm2, gas phase doping ratio of 0.125%, and the p-layer thickness of 15nm. We fabricate μc-Si:H(p)/c-Si(n) heterojunction solar cells without texturing and obtained an efficiency of 13.4%. The comparisons of the solar-cell performances using different surface passivation techniques are discussed.
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| Keywords:
84.60.Jt
81.15.Gh
81.05.Cy
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Published: 01 June 2006
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| PACS: |
84.60.Jt
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(Photoelectric conversion)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Cy
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(Elemental semiconductors)
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