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Light Emission Excited by Schottky Hot Electrons in A1-MgF2-Au( Cu) Thin-Film Devices |
JIANG Mengshu;WEI Qinghua;SHU Qiqing*;ZHENG Keqin* |
Department of Physics, Yuzhou University, Chongqing 630033
*Department of Applied Physics, Chongqing University, Chongqing 630044 |
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Cite this article: |
JIANG Mengshu, WEI Qinghua, SHU Qiqing et al 1995 Chin. Phys. Lett. 12 305-308 |
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Abstract A new type of light-emitting device with Al-MgF2-Au(Cu) junction and the role of residual O2 in fabrication of Al-MgF2-Au(Cu) thin film devices were reported in our other papers. In this paper, we made a further careful investigation about its current-voltage (I - V), current-temperature (I - T) characteristics and the observed light emission spectra in detail. We find the presence of Schottky high field emission in an evaporated sandwich structure of Al-MgF2-Au(Cu) junctions, and argue that the radiation process is mainly due to Schottky hot electrons, which excite surface plasmon-polariton (SPP), then SPP couples to external radiation through surface roughness.
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Keywords:
73.40.Gk
68.55.Gi
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Published: 01 May 1995
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