Chin. Phys. Lett.  2006, Vol. 23 Issue (6): 1627-1630    DOI:
Original Articles |
Growth of Indium Nanorods by Magnetron Sputtering
WEI He-Lin1;HUANG Han-Chen2;ZHANG Xi-Xiang3
1Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 2Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA 3Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong
Cite this article:   
WEI He-Lin, HUANG Han-Chen, ZHANG Xi-Xiang 2006 Chin. Phys. Lett. 23 1627-1630
Download: PDF(304KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Indium nanorods are grown on silicon substrates by using magnetron-sputtering technique. Film morphologies and nanorod microstructure are investigated by using scanning electron microscopy, high-resolution transmission electron microscopy (HRTEM), and x-ray diffraction. It is found that the mean diameter of the nanorods ranges from 30nm to 100nm and the height ranges from 30nm to 200nm. The HRTEM investigations show that the indium nanorods are single crystals and grow along the [100] axis. The nanorods grow from the facets near the surface undulation that is caused by compressive stress in the indium grains generated during grain coalescence process. For low melting point and high diffusivity metal, such as bismuth and indium, this spontaneous nanorod growth mechanism can be used to fabricate nanostructures.
Keywords: 81.07.-b      61.46.+w      81.15.Cd     
Published: 01 June 2006
PACS:  81.07.-b (Nanoscale materials and structures: fabrication and characterization)  
  61.46.+w  
  81.15.Cd (Deposition by sputtering)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I6/01627
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
WEI He-Lin
HUANG Han-Chen
ZHANG Xi-Xiang
Related articles from Frontiers Journals
[1] WANG Guo-Biao, XIONG Huan, LIN You-Xi, FANG Zhi-Lai, KANG Jun-Yong, DUAN Yu, SHEN Wen-Zhong. Green Emission from a Strain-Modulated InGaN Active Layer[J]. Chin. Phys. Lett., 2012, 29(6): 1627-1630
[2] LU Ran,JIANG Gen-Shan,LI Bin,ZHAO Quan-Liang,ZHANG De-Qing,YUAN Jie,CAO Mao-Sheng**. Electrical Properties of Lead Zirconate Titanate Thick Film Containing Micro- and Nano-Crystalline Particles[J]. Chin. Phys. Lett., 2012, 29(5): 1627-1630
[3] WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 1627-1630
[4] ZHU Yun, WANG Yue, WAN Peng-Fei, LI Hong-Yu, WANG Shou-Yu. Optical and Mechanical Properties of Transparent Conductive Al-Doped ZnO Films Deposited by the Sputtering Method[J]. Chin. Phys. Lett., 2012, 29(3): 1627-1630
[5] LUO Bing-Cheng, CHEN Chang-Le**, FAN Fei, JIN Ke-Xin. The Photovoltaic Properties of BiFeO3La0.7Sr0.3MnO3 Heterostructures[J]. Chin. Phys. Lett., 2012, 29(1): 1627-1630
[6] LI Shao-Juan, HE Xin, HAN De-Dong, SUN Lei, WANG Yi, HAN Ru-Qi, CHAN Man-Sun, ZHANG Sheng-Dong, **. Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(1): 1627-1630
[7] WU Wen-Juan**, WANG Zhan-Shan, ZHU Jing-Tao, ZHANG Zhong, WANG Feng-Li, CHEN Ling-Yan, ZHOU Hong-Jun, HUO Tong-Lin . Spectral Resolution Improvement of Mo/Si Multilayers[J]. Chin. Phys. Lett., 2011, 28(8): 1627-1630
[8] YANG Lin-Hong, DONG Hong-Xing, SUN Zheng, SUN Liao-Xin, SHEN Xue-Chu, CHEN Zhang-Hai** . Temperature-Induced Phase Transition of In2O3 from a Rhombohedral Structure to a Body-Centered Cubic Structure[J]. Chin. Phys. Lett., 2011, 28(8): 1627-1630
[9] LIU Hai-Tao, ZHONG Jia-Song, LIU Bing-Feng, LIANG Xiao-Juan, YANG Xin-Yu, JIN Huai-Dong, YANG Fan, XIANG Wei-Dong, ** . L-cystine-Assisted Growth and Mechanism of CuInS2 Nanocrystallines via Solvothermal Process[J]. Chin. Phys. Lett., 2011, 28(5): 1627-1630
[10] HOU Zhi-Ling**, ZHOU Hai-Feng, YUAN Jie, KANG Yu-Qing, YANG Hui-Jing, JIN Hai-Bo, CAO Mao-Sheng** . Enhanced Ferromagnetism and Microwave Dielectric Properties of Bi0.95Y0.05FeO3 Nanocrystals[J]. Chin. Phys. Lett., 2011, 28(3): 1627-1630
[11] YANG Xiao-Guang, YANG Tao**, WANG Ke-Fan, GU Yong-Xian, JI Hai-Ming, XU Peng-Fei, NI Hai-Qiao, NIU Zhi-Chuan, WANG Xiao-Dong, CHEN Yan-Ling, WANG Zhan-Guo . Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots[J]. Chin. Phys. Lett., 2011, 28(3): 1627-1630
[12] WANG Xiao, JIANG Zui-Min, XU Fei, **, MA Zhong-Quan, XU Run, YU Bin, LI Ming-Zhu, ZHENG Ling-Ling, FAN Yong-Liang, HUANG Jian, LU Fang . Enhancement of Er3+ Emission from an Er−Si Codoped Al2O3 Film by Stacking Si−Doped Al2O3 Sublayers[J]. Chin. Phys. Lett., 2011, 28(12): 1627-1630
[13] HUANG Hai-Qin, SUN Jian, LIU Feng-Juan, ZHAO Jian-Wei, HU Zuo-Fu, LI Zhen-Jun, ZHANG Xi-Qing**, WANG Yong-Sheng . Characteristics and Time-Dependent Instability of Ga-Doped ZnO Thin Film Transistor Fabricated by Radio Frequency Magnetron Sputtering[J]. Chin. Phys. Lett., 2011, 28(12): 1627-1630
[14] WANG Yu-Hua**, LI Hui-Qing, LU Jian-Duo, WANG Ru-Wu . Optical Limiting Properties of Ag-Cu Metal Alloy Nanoparticles Analysis by using MATLAB[J]. Chin. Phys. Lett., 2011, 28(11): 1627-1630
[15] LI Na, YUE Chong-Xing**, LI Xu-Xin . Neutrino-Electron Scattering and the Little Higgs Models[J]. Chin. Phys. Lett., 2011, 28(10): 1627-1630
Viewed
Full text


Abstract