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PHOTOREFLECTANCE OF TWO-DIMENSIONAL ELECTRON GAS IN THE SELECTIVELY DOPED GaAS /AlXGa1-XAs HETEROSTRUCTURE GROWN BY MOLECULAR BEAM EPITAXY |
| TANG Yinsheng;JIANG Desheng* |
| University of Science and Technology of China, Hefei
*Institute of Semiconductors, Academia Sinica, Beijing |
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| Cite this article: |
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TANG Yinsheng, JIANG Desheng 1987 Chin. Phys. Lett. 4 283-285 |
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Abstract Room temperature photoreflectance were made on a selectively doped GaAs/n-AlXGa1-XAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.
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Published: 01 June 1987
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