Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate

Chin. Phys. Lett.

1995, Vol. 12

Issue (10): 605-608 DOI:

Original Articles

Experimental Study on Copper Vapor Laser-Induced B-Doping in Si-Substrate

QIAN Yujun;PAN Bailiang;YAO Zhixin

Department of Physics, Zhejiang University, Hangzhou 310027

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QIAN Yujun, PAN Bailiang, YAO Zhixin 1995 Chin. Phys. Lett. 12 605-608

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Abstract In this paper we report the experimental results of copper vapor laser-induced B-doping in Si-substrate. The laser doped p-n junctions have depths less than 0.2μm and surface B concentrations more than 10²¹cm^-3. The highest photoelectric efficiency of solar cell reaches 9.2%. It shows that copper vapor laser has the distinguished advantage in laser-induced doping.

Keywords: 61.80.-x 61.70.Sk 73.40.-c

Published: 01 October 1995

PACS:	61.80.-x	(Physical radiation effects, radiation damage)
	61.70.Sk
	73.40.-c	(Electronic transport in interface structures)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I10/0605

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