| Original Articles |
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Intersubband Third-Order Nonlinearities in a GaAs/AIGaAs Step Quantum Well Structure by Phase Conjugation Method |
| MA Jianwei;CHEN Zhenghao. CUI Dafu;LÜ Huibin;HE Meng;YANG Guozhen |
| Institute of Physics, Academia Sinica, Beijing 100080 |
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| Cite this article: |
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MA Jianwei, CHEN Zhenghao. CUI Dafu, LÜ et al 1995 Chin. Phys. Lett. 12 673-576 |
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Abstract In this letter, we present the observation of phase conjugation at 9.27μm in a GaAs/AlGaAs multiple step quantum well structure. The response is caused by the nearly resonant intersubband transition. The magnitude of x(3) determined by this phase conjugation method is about 8 x 10-5 esu and the phase conjugate reflectivity η is about 6 x 10-3 uncorrected for Fresnel reflections.
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| Keywords:
42.65.Hw
42.65.An
73.40.Kp
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Published: 01 November 1995
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| PACS: |
42.65.Hw
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(Phase conjugation; photorefractive and Kerr effects)
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42.65.An
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(Optical susceptibility, hyperpolarizability)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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