Photoluminescence Studies of Single Submonolayer InAs Structures
Grown on GaAs (001) Matrix

Chin. Phys. Lett.

1995, Vol. 12

Issue (11): 697-700 DOI:

Original Articles

Photoluminescence Studies of Single Submonolayer InAs Structures Grown on GaAs (001) Matrix

LI Wei;WANG Zhanguo;LIANG Jiben;XU Bo;ZHU Zhanping;YUAN Zhiliang¹;LI Jian²

Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Academia Sinica, Beijing 100083 ¹National Semiconductor Superlattice Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083 ²National Integrated Optoelectronics Laboratory, Institute of Semiconductors, Academia Sinica, Beijing 100083

Cite this article:

LI Wei, WANG Zhanguo, LIANG Jiben et al 1995 Chin. Phys. Lett. 12 697-700

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Abstract We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.

Keywords: 78.66.Fd 78.55.Cr 73.20.Dx

Published: 01 November 1995

PACS:	78.66.Fd	(III-V semiconductors)
	78.55.Cr	(III-V semiconductors)
	73.20.Dx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I11/0697

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