Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate

Chin. Phys. Lett.

1994, Vol. 11

Issue (5): 293-296 DOI:

Original Articles

Channeling Alignment for Epitaxial Light-Mass Film on Heavy-Mass Substrate

YIN Shiduan;XIAO Guangming;ZHU Peiran^*

Institute of Semiconductors, Academia Sinica, Beijing 100083 ^*Institute of Physics, Academia Sinica, Beijing 100080

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YIN Shiduan, XIAO Guangming, ZHU Peiran 1994 Chin. Phys. Lett. 11 293-296

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Abstract A simple procedure for obtaining a background-free backscattering spectrum of a light-mass film on a heavy-mass substrate by a normal incidence/grazing exit geometry has been described. Using this method such films can be aligned rapidly and accurately, and the impurity or defect information on the films can be obtained without need for realignment. Example is given from MeV ³Li⁺ analysis of a deposited film of Si on a single crystal substrate of yttria-stabilized, cubic zirconia.

Keywords: 73.40.Lq 81.15.Ef

Published: 01 May 1994

PACS:	73.40.Lq	(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
	81.15.Ef

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I5/0293

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	YIN Shiduan
	XIAO Guangming
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