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A Small Signal Equivalent Circuit Model for Resonant Tunnelling Diode |
| MA Long1;HUANG Ying-Long2;ZHANG Yang3;WANG Liang-Chen1;YANG Fu-Hua1,2;ZENG Yi-Ping3 |
| 1Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3Novel Semiconductor Materials Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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MA Long, HUANG Ying-Long, ZHANG Yang et al 2006 Chin. Phys. Lett. 23 2292-2295 |
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Abstract We report a resonant tunnelling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current--voltage (I--V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunnelling process, is also calculated to be 2.09ps.
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| Keywords:
85.30.Mn
84.37.+q
07.05.Tp
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Published: 01 August 2006
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| PACS: |
85.30.Mn
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(Junction breakdown and tunneling devices (including resonance tunneling devices))
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84.37.+q
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(Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))
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07.05.Tp
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(Computer modeling and simulation)
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