Role of Residual O<suB>2</suB> in Fabrication of A1-MgF<suB>2</suB>-Au(Cu) Thin Film Devices

Chin. Phys. Lett.

1994, Vol. 11

Issue (6): 379-382 DOI:

Original Articles

Role of Residual O₂ in Fabrication of A1-MgF₂-Au(Cu) Thin Film Devices

ZHENG Keqin;SHU Qiqing;CHEN Xinyong

Department of Applied Physics, Chongqing University, Chongqing 630044

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ZHENG Keqin, SHU Qiqing, CHEN Xinyong 1994 Chin. Phys. Lett. 11 379-382

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Abstract After the light emitting device Al-MgF₂-Au (Cu) junction was reported, we made a further investigation about its structure, high voltage-resistance, explaination of l-V characteristic and mechanism of light emission of these junctions through analyzing in detail. The residual O₂ during fabricating the junctions plays an important role in the properties of the junctions.

Keywords: 73.40.Gk 68.55.Gi

Published: 01 June 1994

PACS:	73.40.Gk	(Tunneling)
	68.55.Gi

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1994/V11/I6/0379

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