Resonant Raman Scattering in GaAs<suB>1-x</suB>P<suB>x</suB>:N

Chin. Phys. Lett.

1996, Vol. 13

Issue (1): 54-57 DOI:

Original Articles

Resonant Raman Scattering in GaAs_1-xP_x:N

YU Rong-wen;ZHENG Jian-sheng;XIAO Mei-jie;LIN Zhi-rong;YAN Bing-zhang

Department of Physics, Xiamen University, Xiamen 361005

Cite this article:

YU Rong-wen, ZHENG Jian-sheng, XIAO Mei-jie et al 1996 Chin. Phys. Lett. 13 54-57

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Abstract We report a study of the resonant Raman scattering (RRS) by optical phonons that is induced by excitons bound to isoelectronic nitrogen impurities in GaAs_1-xP_x:N alloys. Under resonant excitation into N_x band, strong Raman lines involving allowed LO and “forbidden” TO for backscattering configuration from (100) surface are observed. This is interpreted as the breakdown of normal selection rule in the RRS process. By following the temperature dependence of the N_x luminescence and its phonon sidebands, we also separate RRS from sharp line due to luminescence.

Keywords: 78.30.Fs 71.55.Eq 71.35.+z

Published: 01 January 1996

PACS:	78.30.Fs	(III-V and II-VI semiconductors)
	71.55.Eq	(III-V semiconductors)
	71.35.+z

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I1/054

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	YU Rong-wen
	ZHENG Jian-sheng
	XIAO Mei-jie
	LIN Zhi-rong
	YAN Bing-zhang

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