| Original Articles |
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Optical and Structural Properties of AP-MOVPE GaInP/GaAs Heterostructures |
| REN Hongwen;HUANG Bolin;XU Xian gang;JIANG Minhua;ZHENG Wanhua;XU Junying;ZHUANG Wanru |
| Institute of Crystal Materials, Shandong University, Jinan 250100
National Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Academia Sinica, Beijing 100083 |
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| Cite this article: |
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REN Hongwen, HUANG Bolin, XU Xian gang et al 1994 Chin. Phys. Lett. 11 778-781 |
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Abstract Lattice matched GaInP/GaAs heterostructures were grown by atmospheric pressuremetal organic vapor phase epitaxy (AP-MOVPE). Compositional intermixing of As/P and Ga/In near the heterointerfaces was studied by photoluminescence (PL) spectroscopy. Indium segregation, memory effect of In into GaAs and the carry-over of As in the GaInP layer during the growth process were considered as three major factors giving rise to the anomalous emissions in the PL spectra. Both thermal annealing and zinc doping strongly enhanced the compositional interdiffusion near the heterointerfaces.
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| Keywords:
81.15.Gh
66.30.Ny
73.40.Kp
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Published: 01 December 1994
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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66.30.Ny
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(Chemical interdiffusion; diffusion barriers)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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