| Original Articles |
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Silicon-on-Insulator 2 × 2 Symmetric Optical Switch Based on Total Internal Reflection |
| ZHAO Ce-zhou1;LIU En-ke2;LI Guo-zheng2;LIU Yu-liang2;GUO Lin3 |
| 1Microelectronics Institute, Xidian University, Xian 710071
2Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
3Sichuan Institute of Solid-state Circuits, Chongqing 630060
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| Cite this article: |
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ZHAO Ce-zhou, LIU En-ke, LI Guo-zheng et al 1997 Chin. Phys. Lett. 14 106-108 |
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Abstract Based on the large cross-section single-mode rib waveguide condition, the total internal reflection and the free-carrier plasma dispersion effect, a silicon-on-insulator (SOI) 2 × 2 symmetric optical waveguide switch with a transverse injection structure has been proposed and fabricated, in which the SOI technique utilizes silicon and silicon dioxide thermal bonding and back-polishing. The device performance is measured at the wavelength of 1.3μm. It shows that the crosstalk and insertion loss are less than -18.1 and 4.8 dB, respectively, at an injection current of 60mA, and response time is 110 ns.
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| Keywords:
42.82.-m
78.55.-m
42.79.-e
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Published: 01 February 1997
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| PACS: |
42.82.-m
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(Integrated optics)
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78.55.-m
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(Photoluminescence, properties and materials)
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42.79.-e
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(Optical elements, devices, and systems)
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