Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates

Chin. Phys. Lett.

1991, Vol. 8

Issue (10): 529-532 DOI:

Original Articles

Microstructural Characterization of Epitaxial GaAs on Separation-by-Implanted- Oxygen Substrates

ZHU Wenhua;LIN Chenglu;NI Rushan;LI Aizhen;ZOU Shichang;P. L. F. Hernment^*

Ion Beam Laboratory, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050 ^*Department of Electronic and Electrical Engineering, University of Surrey Guildford, GU2 5HX, United Kingdom

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ZHU Wenhua, LIN Chenglu, NI Rushan et al 1991 Chin. Phys. Lett. 8 529-532

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Abstract The direct growth of GaAs by molecular-beam epitaxy on separation-by-implanted-oxygen substrates is demonstrated. Cross-sectional transmission electron microscopy, Rutherford backscattering and channeling techniques have been employed to characterize these layers. Microtwins and threading dislocation are the predominant defects in the layers. Most of the misfit dislocation are confined within the GaAs and Si interface region by forming a type of edge dislocation.

Keywords: 68.55.-a

Published: 01 October 1991

PACS:

68.55.-a

(Thin film structure and morphology)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1991/V8/I10/0529

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	ZHU Wenhua
	LIN Chenglu
	NI Rushan
	LI Aizhen
	ZOU Shichang
	P. L. F. Hernment

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