| Original Articles |
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Heterostructure Intervalley Transferred Electron Effects |
| XUE Fang-Shi |
| National Laboratory for Superlattices and Microstructures,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
Nanjing Electronic Devices Institute, Nanjing 210016 (mailing address) |
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| Cite this article: |
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XUE Fang-Shi 2001 Chin. Phys. Lett. 18 263-265 |
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Abstract A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs--AlAs heterostructure, from which a new heterostructure intervalley transferred electron (HITE) device is obtained. In the 8 mm band, the highest pulse output power of these diodes is 2.65 W and the highest conversion efficiency is 18%. The dc and rf performance of the HITE devices was simulated by the band mixing resonant tunnelling theory and Monte Carlo transport simulation. The HITE effect has transformed the transit-time dipole-layer mode in the Gunn diode into a relaxation oscillation mode in the HITE device. From the comparison of simulated results to the measured data, the HITE effect is demonstrated straightforwardly.
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| Keywords:
73.20.Dx
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Published: 01 February 2001
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