Chin. Phys. Lett.  2001, Vol. 18 Issue (2): 263-265    DOI:
Original Articles |
Heterostructure Intervalley Transferred Electron Effects
XUE Fang-Shi
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 Nanjing Electronic Devices Institute, Nanjing 210016 (mailing address)
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XUE Fang-Shi 2001 Chin. Phys. Lett. 18 263-265
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Abstract A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs--AlAs heterostructure, from which a new heterostructure intervalley transferred electron (HITE) device is obtained. In the 8 mm band, the highest pulse output power of these diodes is 2.65 W and the highest conversion efficiency is 18%. The dc and rf performance of the HITE devices was simulated by the band mixing resonant tunnelling theory and Monte Carlo transport simulation. The HITE effect has transformed the transit-time dipole-layer mode in the Gunn diode into a relaxation oscillation mode in the HITE device. From the comparison of simulated results to the measured data, the HITE effect is demonstrated straightforwardly.

Keywords: 73.20.Dx     
Published: 01 February 2001
PACS:  73.20.Dx  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2001/V18/I2/0263
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